PART |
Description |
Maker |
KMI22/1 |
Rotational speed sensor for extended air gap application and direction detection
|
Philips
|
2N6796LCC4 |
N-Channel Power MOSFET(Vdss00VId(cont).4A,Rds(on).18ΩN沟道功率型MOS场效应管(Vdss00VId(cont).4A,Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
MC1496F MC1496 MC1596 MC1596N MC1596F MC1496N |
30V; 10mA; balanced modulator/demodulator. For suppresed carrier and amplitude modulation, synchronous detection, FM detection, phase detection, sampling, single sideband, frequency doubling BALANCED MUDULATOR/DEMODULATOR
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
B57500M0103A005 |
Air sensor for air conditioning
|
EPCOS
|
SML9030-T254 SML9030T254 |
P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))
|
Semelab(Magnatec) TT electronics Semelab Limited Seme LAB
|
BD52004GUL-E2 BD52004GUL-TR BD52004HFV-E2 BD52004H |
Omnipolar Detection Hall ICs (Polarity detection for both S and N features dual outputs)
|
Rohm
|
ADE7761ARS ADE7761ARSRL ADE7761ARS-REF |
Single Phase Energy Metering IC with On-Chip Fault Detection and Missing Neutral Detection
|
Analog Devices
|
IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET(减振钢板基本:60V的,身份证(续)5A条,的Rds(on):0.027Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本0V的,身份证(续)5A条,的Rds(on.027Ω))
|
SemeLAB Seme LAB International Rectifier http://
|
IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)3.9A,的Rds(on):0.077Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本100V的,身份证(续)3.9A时,RDS(对):0.077Ω))
|
TT electronics Semelab, Ltd. International Rectifier, Corp. Seme LAB
|